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Returning user. Request Username Can't sign in? Forgot your username? Enter your email address below and we will send you your username. Laser Part. Beams 31 , — Yang, M. Generation and erasure of femtosecond laser-induced periodic surface structures on nanoparticle-covered silicon by a single laser pulse. Tsibidis, G. Dynamics of ripple formation on silicon surfaces by ultrashort laser pulses in subablation conditions.

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B 86 , Liu, Y. Ciliary white light: Optical aspect of ultrashort laser ablation on transparent dielectrics. Vorobyev, A. Colorizing metals with femtosecond laser pulses. Jiang, L. Two-step femtosecond laser pulse train fabrication of nanostructured substrates for highly surface-enhanced Raman scattering. Nonlinear laser lithography for indefinitely large-area nanostructuring with femtosecond pulses. Antireflection effect of femtosecond laser-induced periodic surface structures on silicon. Express 19 , A—A Jia, T.

Formation of nanogratings on the surface of a ZnSe crystal irradiated by femtosecond laser pulses. B 72 , Hnatovsky, C. Femtosecond laser writing of porous capillaries inside fused silica glass. Mak, K. Atomically thin MoS 2 : A new direct-gap semiconductor. Splendiani, A. Emerging photoluminescence in monolayer MoS 2. Nano Lett. Chakraborty, B. Symmetry-dependent phonon renormalization in monolayer MoS 2 transistor.

B 85 , Soon, J. Electrochemical double-layer capacitance of MoS 2 nanowall films. Solid-State Lett. Radisavljevic, B. Single-layer MoS 2 transistors. Wang, H. Integrated circuits based on bilayer MoS 2 transistors. Alkis, S. Thin film MoS 2 nanocrystal based ultraviolet photodetector. Express 20 , — Sutar, S. Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS 2 films. Castellanos-Gomez, A.

Laser-thinning of MoS 2 : On demand generation of a single-layer semiconductor. Paradisanos, I. Intense femtosecond photoexcitation of bulk and monolayer MoS 2. Yamamoto, M. Anisotropic etching of atomically thin MoS 2. C , — Pulse number dependence of laser-induced periodic surface structures for femtosecond laser irradiation of silicon. Liu, J. Simple technique for measurements of pulsed Gaussian-beam spot sizes.


Windom, B. Li, H. From bulk to monolayer MoS 2 : Evolution of Raman scattering. Scheuschner, N. Interlayer resonant Raman modes in few-layer MoS 2.

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B 91 , Liu, P. Picosecond laser-induced melting and resolidification morphology on Si. Modeling the phase-change processes in pulsed laser-irradiated InSb. B 59 , Dynamics of femtosecond laser-induced melting and amorphization of indium phosphide. Smith, M. The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation. Raether, H. Strait, J. High intrinsic mobility and ultrafast carrier dynamics in multilayer metal-dichalcogenide MoS 2.

B 90 , Cheiwchanchamnangij, T. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS 2.

Zhang, H. Molybdenum disulfide MoS 2 as a broadband saturable absorber for ultra-fast photonics. Express 22 , — Wang, K. Ultrafast saturable absorption of two-dimensional MoS 2 nanosheets.

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ACS Nano 7 , — Ding, J. Anisotropic imprint of amorphization and phase separation in manganite thin films via laser interference irradiation. Small 11 , — Roxlo, C. Bulk and surface optical absorption in molybdenum disulfide. A 5 , — Download references. All authors contributed to the scientific discussion and revision of the article. This work is licensed under a Creative Commons Attribution 4. Applied Sciences Advanced Functional Materials AIP Advances By submitting a comment you agree to abide by our Terms and Community Guidelines.

The Periodicity of Photoelectric Thresholds

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Introduction A universal phenomenon in the field of femtosecond fs laser ablation is the appearance of periodic ripples on the material surface with a period smaller than the laser wavelength and laser polarization dependence 1. Results Figure 1 depicts the scanning electron microscopy SEM images of MoS 2 surface irradiated by fs laser beam of different incident fluences with pulses. Full size image.

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Figure 4: AFM images for the cases of various pulse numbers and incident fluences. Figure 5: Average ripple height measured according to Fig. Figure 6: Micro-Raman spectra Discussion Note that the fluences we mentioned previously are the average incident fluences that equal to the energy per laser pulse divided by the focused Gaussian beam area on MoS 2 , which cannot stand for the real fluences received by the structured regions, since the focused beams have larger areas.

Figure 7 A Squared diameter of the structured areas squares belong to the DSR region and circles belong to the NSR region on MoS 2 surface versus the incident peak fluence of the laser pulse. Additional Information How to cite this article : Pan, Y. References 1. Article Google Scholar 4. Article Google Scholar 5.